Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STD1NK80Z-1

STD1NK80Z-1

For Reference Only

Part Number STD1NK80Z-1
PNEDA Part # STD1NK80Z-1
Description MOSFET N-CH 800V 1A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 21,906
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 18 - Apr 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD1NK80Z-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD1NK80Z-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD1NK80Z-1, STD1NK80Z-1 Datasheet (Total Pages: 15, Size: 601.04 KB)
PDFSTN1NK80Z Datasheet Cover
STN1NK80Z Datasheet Page 2 STN1NK80Z Datasheet Page 3 STN1NK80Z Datasheet Page 4 STN1NK80Z Datasheet Page 5 STN1NK80Z Datasheet Page 6 STN1NK80Z Datasheet Page 7 STN1NK80Z Datasheet Page 8 STN1NK80Z Datasheet Page 9 STN1NK80Z Datasheet Page 10 STN1NK80Z Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STD1NK80Z-1 Datasheet
  • where to find STD1NK80Z-1
  • STMicroelectronics

  • STMicroelectronics STD1NK80Z-1
  • STD1NK80Z-1 PDF Datasheet
  • STD1NK80Z-1 Stock

  • STD1NK80Z-1 Pinout
  • Datasheet STD1NK80Z-1
  • STD1NK80Z-1 Supplier

  • STMicroelectronics Distributor
  • STD1NK80Z-1 Price
  • STD1NK80Z-1 Distributor

STD1NK80Z-1 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs16Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds160pF @ 25V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

The Products You May Be Interested In

NSTR4501NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

80mOhm @ 3.6A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

200pF @ 10V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

ZXMP3A13FTA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

210mOhm @ 1.4A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

206pF @ 15V

FET Feature

-

Power Dissipation (Max)

625mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

IRFPS37N50APBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

180nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5579pF @ 25V

FET Feature

-

Power Dissipation (Max)

446W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

SUPER-247™ (TO-274AA)

Package / Case

TO-274AA

RQ3E100MNTB1

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12.3mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

9.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

520pF @ 15V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HSMT (3.2x3)

Package / Case

8-PowerVDFN

AOD2HC60

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 800mA, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

466pF @ 100V

FET Feature

-

Power Dissipation (Max)

74W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

B39162B4300F210

B39162B4300F210

Qualcomm

FILTER SAW 1.575GHZ 5SMD

NC7SZ125P5X

NC7SZ125P5X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-5

PS2801C-4-A

PS2801C-4-A

CEL

OPTOISO 2.5KV 4CH TRANS 16SSOP

MCP1725T-3302E/MC

MCP1725T-3302E/MC

Microchip Technology

IC REG LINEAR 3.3V 500MA 8DFN

IPA60R360P7SXKSA1

IPA60R360P7SXKSA1

Infineon Technologies

MOSFET N-CHANNEL 600V 9A TO220

M25PX16-VMW6TG TR

M25PX16-VMW6TG TR

Micron Technology Inc.

IC FLASH 16M SPI 75MHZ 8SO

RB751V40T1G

RB751V40T1G

ON Semiconductor

DIODE SCHOTTKY 30V 30MA SOD323

NAND256W3A2BN6E

NAND256W3A2BN6E

Micron Technology Inc.

IC FLASH 256M PARALLEL 48TSOP

AT28C16-15TC

AT28C16-15TC

Microchip Technology

IC EEPROM 16K PARALLEL 28TSOP

MMBTA42LT3G

MMBTA42LT3G

ON Semiconductor

TRANS NPN 300V 0.5A SOT-23

250S130-RADR

250S130-RADR

Littelfuse

PTC RESET FUSE 60V 130MA 2SMD

IR2113STRPBF

IR2113STRPBF

Infineon Technologies

IC MOSFET DRVR HI/LO SIDE 16SOIC