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STD11N65M2

STD11N65M2

For Reference Only

Part Number STD11N65M2
PNEDA Part # STD11N65M2
Description MOSFET N-CH 650V 7A DPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,880
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD11N65M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD11N65M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD11N65M2, STD11N65M2 Datasheet (Total Pages: 27, Size: 757.73 KB)
PDFSTP11N65M2 Datasheet Cover
STP11N65M2 Datasheet Page 2 STP11N65M2 Datasheet Page 3 STP11N65M2 Datasheet Page 4 STP11N65M2 Datasheet Page 5 STP11N65M2 Datasheet Page 6 STP11N65M2 Datasheet Page 7 STP11N65M2 Datasheet Page 8 STP11N65M2 Datasheet Page 9 STP11N65M2 Datasheet Page 10 STP11N65M2 Datasheet Page 11

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STD11N65M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II Plus
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs670mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds410pF @ 100V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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