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STD11N60M2-EP

STD11N60M2-EP

For Reference Only

Part Number STD11N60M2-EP
PNEDA Part # STD11N60M2-EP
Description N-CHANNEL 600 V, 0.550 OHM TYP.,
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 53,334
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Dec 3 - Dec 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD11N60M2-EP Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD11N60M2-EP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD11N60M2-EP, STD11N60M2-EP Datasheet (Total Pages: 17, Size: 369.46 KB)
PDFSTD11N60M2-EP Datasheet Cover
STD11N60M2-EP Datasheet Page 2 STD11N60M2-EP Datasheet Page 3 STD11N60M2-EP Datasheet Page 4 STD11N60M2-EP Datasheet Page 5 STD11N60M2-EP Datasheet Page 6 STD11N60M2-EP Datasheet Page 7 STD11N60M2-EP Datasheet Page 8 STD11N60M2-EP Datasheet Page 9 STD11N60M2-EP Datasheet Page 10 STD11N60M2-EP Datasheet Page 11

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STD11N60M2-EP Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2-EP
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs595mOhm @ 3.75A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12.4nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds390pF @ 100V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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