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STD11N50M2

STD11N50M2

For Reference Only

Part Number STD11N50M2
PNEDA Part # STD11N50M2
Description MOSFET N-CH 500V 8A DPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,184
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD11N50M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD11N50M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD11N50M2, STD11N50M2 Datasheet (Total Pages: 22, Size: 760.46 KB)
PDFSTF11N50M2 Datasheet Cover
STF11N50M2 Datasheet Page 2 STF11N50M2 Datasheet Page 3 STF11N50M2 Datasheet Page 4 STF11N50M2 Datasheet Page 5 STF11N50M2 Datasheet Page 6 STF11N50M2 Datasheet Page 7 STF11N50M2 Datasheet Page 8 STF11N50M2 Datasheet Page 9 STF11N50M2 Datasheet Page 10 STF11N50M2 Datasheet Page 11

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STD11N50M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II Plus
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds395pF @ 100V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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