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STB80NF55-06-1

STB80NF55-06-1

For Reference Only

Part Number STB80NF55-06-1
PNEDA Part # STB80NF55-06-1
Description MOSFET N-CH 55V 80A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 22,188
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB80NF55-06-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB80NF55-06-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB80NF55-06-1, STB80NF55-06-1 Datasheet (Total Pages: 17, Size: 437.22 KB)
PDFSTB80NF55-06-1 Datasheet Cover
STB80NF55-06-1 Datasheet Page 2 STB80NF55-06-1 Datasheet Page 3 STB80NF55-06-1 Datasheet Page 4 STB80NF55-06-1 Datasheet Page 5 STB80NF55-06-1 Datasheet Page 6 STB80NF55-06-1 Datasheet Page 7 STB80NF55-06-1 Datasheet Page 8 STB80NF55-06-1 Datasheet Page 9 STB80NF55-06-1 Datasheet Page 10 STB80NF55-06-1 Datasheet Page 11

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STB80NF55-06-1 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs189nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4400pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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