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STB80NE03L-06T4

STB80NE03L-06T4

For Reference Only

Part Number STB80NE03L-06T4
PNEDA Part # STB80NE03L-06T4
Description MOSFET N-CH 30V 80A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,006
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB80NE03L-06T4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB80NE03L-06T4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB80NE03L-06T4, STB80NE03L-06T4 Datasheet (Total Pages: 13, Size: 431.36 KB)
PDFSTB80NE03L-06T4 Datasheet Cover
STB80NE03L-06T4 Datasheet Page 2 STB80NE03L-06T4 Datasheet Page 3 STB80NE03L-06T4 Datasheet Page 4 STB80NE03L-06T4 Datasheet Page 5 STB80NE03L-06T4 Datasheet Page 6 STB80NE03L-06T4 Datasheet Page 7 STB80NE03L-06T4 Datasheet Page 8 STB80NE03L-06T4 Datasheet Page 9 STB80NE03L-06T4 Datasheet Page 10 STB80NE03L-06T4 Datasheet Page 11

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STB80NE03L-06T4 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs130nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6500pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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