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STB7NK80Z-1

STB7NK80Z-1

For Reference Only

Part Number STB7NK80Z-1
PNEDA Part # STB7NK80Z-1
Description MOSFET N-CH 800V 5.2A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,768
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB7NK80Z-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB7NK80Z-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB7NK80Z-1, STB7NK80Z-1 Datasheet (Total Pages: 17, Size: 935.37 KB)
PDFSTB7NK80Z-1 Datasheet Cover
STB7NK80Z-1 Datasheet Page 2 STB7NK80Z-1 Datasheet Page 3 STB7NK80Z-1 Datasheet Page 4 STB7NK80Z-1 Datasheet Page 5 STB7NK80Z-1 Datasheet Page 6 STB7NK80Z-1 Datasheet Page 7 STB7NK80Z-1 Datasheet Page 8 STB7NK80Z-1 Datasheet Page 9 STB7NK80Z-1 Datasheet Page 10 STB7NK80Z-1 Datasheet Page 11

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STB7NK80Z-1 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.8Ohm @ 2.6A, 10V
Vgs(th) (Max) @ Id4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1138pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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