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STB7ANM60N

STB7ANM60N

For Reference Only

Part Number STB7ANM60N
PNEDA Part # STB7ANM60N
Description MOSFET N-CH 600V DPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,784
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB7ANM60N Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB7ANM60N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB7ANM60N, STB7ANM60N Datasheet (Total Pages: 20, Size: 740.84 KB)
PDFSTB7ANM60N Datasheet Cover
STB7ANM60N Datasheet Page 2 STB7ANM60N Datasheet Page 3 STB7ANM60N Datasheet Page 4 STB7ANM60N Datasheet Page 5 STB7ANM60N Datasheet Page 6 STB7ANM60N Datasheet Page 7 STB7ANM60N Datasheet Page 8 STB7ANM60N Datasheet Page 9 STB7ANM60N Datasheet Page 10 STB7ANM60N Datasheet Page 11

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STB7ANM60N Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, MDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250mA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds363pF @ 50V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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