Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STB5NK50Z-1

STB5NK50Z-1

For Reference Only

Part Number STB5NK50Z-1
PNEDA Part # STB5NK50Z-1
Description MOSFET N-CH 500V 4.4A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,952
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB5NK50Z-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB5NK50Z-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB5NK50Z-1, STB5NK50Z-1 Datasheet (Total Pages: 29, Size: 669.79 KB)
PDFSTD5NK50Z-1 Datasheet Cover
STD5NK50Z-1 Datasheet Page 2 STD5NK50Z-1 Datasheet Page 3 STD5NK50Z-1 Datasheet Page 4 STD5NK50Z-1 Datasheet Page 5 STD5NK50Z-1 Datasheet Page 6 STD5NK50Z-1 Datasheet Page 7 STD5NK50Z-1 Datasheet Page 8 STD5NK50Z-1 Datasheet Page 9 STD5NK50Z-1 Datasheet Page 10 STD5NK50Z-1 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STB5NK50Z-1 Datasheet
  • where to find STB5NK50Z-1
  • STMicroelectronics

  • STMicroelectronics STB5NK50Z-1
  • STB5NK50Z-1 PDF Datasheet
  • STB5NK50Z-1 Stock

  • STB5NK50Z-1 Pinout
  • Datasheet STB5NK50Z-1
  • STB5NK50Z-1 Supplier

  • STMicroelectronics Distributor
  • STB5NK50Z-1 Price
  • STB5NK50Z-1 Distributor

STB5NK50Z-1 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds535pF @ 25V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

The Products You May Be Interested In

SI2343DS-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

53mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

540pF @ 15V

FET Feature

-

Power Dissipation (Max)

750mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

IXFT80N08

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

180nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4800pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

TPN1R603PL,L1Q

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIX-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.6mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

2.1V @ 300µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3900pF @ 15V

FET Feature

-

Power Dissipation (Max)

104W (Tc)

Operating Temperature

175°C

Mounting Type

Surface Mount

Supplier Device Package

8-TSON Advance (3.3x3.3)

Package / Case

8-PowerVDFN

IPL60R125P7AUMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

125mOhm @ 8.2A, 10V

Vgs(th) (Max) @ Id

4V @ 410µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1544pF @ 400V

FET Feature

-

Power Dissipation (Max)

111W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-VSON-4

Package / Case

4-PowerTSFN

RS1E150GNTB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

590pF @ 15V

FET Feature

-

Power Dissipation (Max)

3W (Ta), 22.9W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HSOP

Package / Case

8-PowerTDFN

Recently Sold

0217.500MXP

0217.500MXP

Littelfuse

FUSE GLASS 500MA 250VAC 5X20MM

MBR0530T1G

MBR0530T1G

ON Semiconductor

DIODE SCHOTTKY 30V 500MA SOD123

AD9765ASTZ

AD9765ASTZ

Analog Devices

IC DAC 12BIT A-OUT 48LQFP

USB4604-1080HN

USB4604-1080HN

Microchip Technology

IC USB HUB/FLASH CTLR 48QFN

SMAJ40CA

SMAJ40CA

Bourns

TVS DIODE 40V 64.5V SMA

LM7805CT

LM7805CT

ON Semiconductor

IC REG LINEAR 5V 1A TO220AB

MCR03EZPJ000

MCR03EZPJ000

Rohm Semiconductor

RES SMD 0 OHM JUMPER 1/10W 0603

TAJD686K016RNJ

TAJD686K016RNJ

CAP TANT 68UF 10% 16V 2917

ADG849YKSZ-REEL7

ADG849YKSZ-REEL7

Analog Devices

IC SWITCH SPDT SC70-6

MT41J512M8RH-093:E

MT41J512M8RH-093:E

Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA

IRFU9024NPBF

IRFU9024NPBF

Infineon Technologies

MOSFET P-CH 55V 11A I-PAK

HCPL-3700-500E

HCPL-3700-500E

Broadcom

OPTOISOLATOR 3.75KV DARL 8DIP GW