Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STB50N25M5

STB50N25M5

For Reference Only

Part Number STB50N25M5
PNEDA Part # STB50N25M5
Description MOSFET N-CH 250V 28A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,070
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB50N25M5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB50N25M5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB50N25M5, STB50N25M5 Datasheet (Total Pages: 14, Size: 904.77 KB)
PDFSTB50N25M5 Datasheet Cover
STB50N25M5 Datasheet Page 2 STB50N25M5 Datasheet Page 3 STB50N25M5 Datasheet Page 4 STB50N25M5 Datasheet Page 5 STB50N25M5 Datasheet Page 6 STB50N25M5 Datasheet Page 7 STB50N25M5 Datasheet Page 8 STB50N25M5 Datasheet Page 9 STB50N25M5 Datasheet Page 10 STB50N25M5 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STB50N25M5 Datasheet
  • where to find STB50N25M5
  • STMicroelectronics

  • STMicroelectronics STB50N25M5
  • STB50N25M5 PDF Datasheet
  • STB50N25M5 Stock

  • STB50N25M5 Pinout
  • Datasheet STB50N25M5
  • STB50N25M5 Supplier

  • STMicroelectronics Distributor
  • STB50N25M5 Price
  • STB50N25M5 Distributor

STB50N25M5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 14A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1700pF @ 50V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

ECH8308-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

12.5mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

26nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 6V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-ECH

Package / Case

8-SMD, Flat Lead

DMTH3004LPS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

22A (Ta), 145A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

43.7nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

2370pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta), 136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

IRFP064VPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

130A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 78A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6760pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

BSS83PL6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

330mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2Ohm @ 330mA, 10V

Vgs(th) (Max) @ Id

2V @ 80µA

Gate Charge (Qg) (Max) @ Vgs

3.57nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

78pF @ 25V

FET Feature

-

Power Dissipation (Max)

360mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

VS-FA72SA50LC

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

72A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

80mOhm @ 34A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

338nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1136W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227

Package / Case

SOT-227-4, miniBLOC

Recently Sold

IRFR5505TRPBF

IRFR5505TRPBF

Infineon Technologies

MOSFET P-CH 55V 18A DPAK

TSML1020

TSML1020

Vishay Semiconductor Opto Division

EMITTER IR 940NM 100MA SMD

AD780ARZ-REEL7

AD780ARZ-REEL7

Analog Devices

IC VREF SERIES/SHUNT PROG 8SOIC

SMDB3

SMDB3

STMicroelectronics

DIAC 28-36V 1A SOT23-3

AC0603FR-07100KL

AC0603FR-07100KL

Yageo

RES SMD 100K OHM 1% 1/10W 0603

BAS40-04-7-F

BAS40-04-7-F

Diodes Incorporated

DIODE ARRAY SCHOTTKY 40V SOT23-3

ADG3304BRUZ

ADG3304BRUZ

Analog Devices

IC TRNSLTR BIDIRECTIONAL 14TSSOP

MMBT4403LT1G

MMBT4403LT1G

ON Semiconductor

TRANS PNP 40V 0.6A SOT23

BC817-16

BC817-16

Diodes Incorporated

TRANS NPN 45V 0.8A SOT23-3

ALT4532M-171-T001

ALT4532M-171-T001

TDK

XFRMR LAN 1CT:1CT 170UH

SD103AW-E3-08

SD103AW-E3-08

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V SOD123

HMC7044LP10BE

HMC7044LP10BE

Analog Devices

IC JITTER ATTENUATOR 68LFCSP