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STB180N55F3

STB180N55F3

For Reference Only

Part Number STB180N55F3
PNEDA Part # STB180N55F3
Description MOSFET N-CH 55V 120A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 19,782
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB180N55F3 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB180N55F3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB180N55F3, STB180N55F3 Datasheet (Total Pages: 14, Size: 446.99 KB)
PDFSTP180N55F3 Datasheet Cover
STP180N55F3 Datasheet Page 2 STP180N55F3 Datasheet Page 3 STP180N55F3 Datasheet Page 4 STP180N55F3 Datasheet Page 5 STP180N55F3 Datasheet Page 6 STP180N55F3 Datasheet Page 7 STP180N55F3 Datasheet Page 8 STP180N55F3 Datasheet Page 9 STP180N55F3 Datasheet Page 10 STP180N55F3 Datasheet Page 11

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STB180N55F3 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6800pF @ 25V
FET Feature-
Power Dissipation (Max)330W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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