Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STB155N3LH6

STB155N3LH6

For Reference Only

Part Number STB155N3LH6
PNEDA Part # STB155N3LH6
Description MOSFET N-CH 30V 80A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,898
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB155N3LH6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB155N3LH6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB155N3LH6, STB155N3LH6 Datasheet (Total Pages: 18, Size: 1,007.83 KB)
PDFSTB155N3LH6 Datasheet Cover
STB155N3LH6 Datasheet Page 2 STB155N3LH6 Datasheet Page 3 STB155N3LH6 Datasheet Page 4 STB155N3LH6 Datasheet Page 5 STB155N3LH6 Datasheet Page 6 STB155N3LH6 Datasheet Page 7 STB155N3LH6 Datasheet Page 8 STB155N3LH6 Datasheet Page 9 STB155N3LH6 Datasheet Page 10 STB155N3LH6 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STB155N3LH6 Datasheet
  • where to find STB155N3LH6
  • STMicroelectronics

  • STMicroelectronics STB155N3LH6
  • STB155N3LH6 PDF Datasheet
  • STB155N3LH6 Stock

  • STB155N3LH6 Pinout
  • Datasheet STB155N3LH6
  • STB155N3LH6 Supplier

  • STMicroelectronics Distributor
  • STB155N3LH6 Price
  • STB155N3LH6 Distributor

STB155N3LH6 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3800pF @ 25V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

STL75N3LLZH5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.1mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.8nC @ 4.5V

Vgs (Max)

±18V

Input Capacitance (Ciss) (Max) @ Vds

1510pF @ 25V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (5x6)

Package / Case

8-PowerVDFN

SUD25N04-25-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

25mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

510pF @ 25V

FET Feature

-

Power Dissipation (Max)

3W (Ta), 33W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NTLUS3C18PZTBG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

24mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15.8nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1570pF @ 6V

FET Feature

-

Power Dissipation (Max)

660mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-UDFN (1.6x1.6)

Package / Case

6-PowerUFDFN

STD6N95K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH5™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

950V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.25Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 100V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IPI086N10N3GXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

8.6mOhm @ 73A, 10V

Vgs(th) (Max) @ Id

3.5V @ 75µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3980pF @ 50V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

PESD12VS1UB,115

PESD12VS1UB,115

Nexperia

TVS DIODE 12V 35V SOD523

CMDSH-3TR

CMDSH-3TR

SMC Diode Solutions

DIODE SCHOTTKY 30V 100MA SOD323

STPS1H100A

STPS1H100A

STMicroelectronics

DIODE SCHOTTKY 100V 1A SMA

EPM1270F256C5N

EPM1270F256C5N

Intel

IC CPLD 980MC 6.2NS 256FBGA

MTFC8GACAAAM-4M IT

MTFC8GACAAAM-4M IT

Micron Technology Inc.

IC FLASH EMMC 64G

W25Q80DVSNIG

W25Q80DVSNIG

Winbond Electronics

IC FLASH 8M SPI 104MHZ 8SOIC

SRP4020-2R2M

SRP4020-2R2M

Bourns

FIXED IND 2.2UH 3.9A 40 MOHM SMD

MAX1490BEPG+

MAX1490BEPG+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 24DIP

SMBJ18CA-E3/52

SMBJ18CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 18V 29.2V DO214AA

NTJD5121NT1G

NTJD5121NT1G

ON Semiconductor

MOSFET 2N-CH 60V 0.295A SOT363

MAX1111CPE+

MAX1111CPE+

Maxim Integrated

IC ADC 8BIT SAR 16DIP

TSM2323CX RFG

TSM2323CX RFG

Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 20V 4.7A SOT23