Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STB14NM65N

STB14NM65N

For Reference Only

Part Number STB14NM65N
PNEDA Part # STB14NM65N
Description MOSFET N-CH 650V 12A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 22,620
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB14NM65N Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB14NM65N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB14NM65N, STB14NM65N Datasheet (Total Pages: 18, Size: 546.15 KB)
PDFSTF14NM65N Datasheet Cover
STF14NM65N Datasheet Page 2 STF14NM65N Datasheet Page 3 STF14NM65N Datasheet Page 4 STF14NM65N Datasheet Page 5 STF14NM65N Datasheet Page 6 STF14NM65N Datasheet Page 7 STF14NM65N Datasheet Page 8 STF14NM65N Datasheet Page 9 STF14NM65N Datasheet Page 10 STF14NM65N Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STB14NM65N Datasheet
  • where to find STB14NM65N
  • STMicroelectronics

  • STMicroelectronics STB14NM65N
  • STB14NM65N PDF Datasheet
  • STB14NM65N Stock

  • STB14NM65N Pinout
  • Datasheet STB14NM65N
  • STB14NM65N Supplier

  • STMicroelectronics Distributor
  • STB14NM65N Price
  • STB14NM65N Distributor

STB14NM65N Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 50V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

FQD6N60CTM-WS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

810pF @ 25V

FET Feature

-

Power Dissipation (Max)

80W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

5.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

143nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

8245pF @ 25V

FET Feature

-

Power Dissipation (Max)

890W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264

Package / Case

TO-264-3, TO-264AA

IPD5N25S3430ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

430mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4V @ 13µA

Gate Charge (Qg) (Max) @ Vgs

6.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

422pF @ 25V

FET Feature

-

Power Dissipation (Max)

41W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3-313

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

DMT3009LFVWQ-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

3.8V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 14.4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

823pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 35.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount, Wettable Flank

Supplier Device Package

PowerDI3333-8 (SWP) Type UX

Package / Case

8-PowerVDFN

IRL2203NPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

116A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3290pF @ 25V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

TJA1052IT/5Y

TJA1052IT/5Y

NXP

DGTL ISOLATOR 5KV 2CH CAN 16SO

IRF8313TRPBF

IRF8313TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 9.7A 8-SOIC

IR2110STRPBF

IR2110STRPBF

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 16SOIC

ATXMEGA64A3U-AU

ATXMEGA64A3U-AU

Microchip Technology

IC MCU 8/16BIT 64KB FLASH 64TQFP

CDSOT23-SM712

CDSOT23-SM712

Bourns

TVS DIODE 7V/12V 14V/26V SOT23-3

ERJ-M1WSF20MU

ERJ-M1WSF20MU

Panasonic Electronic Components

RES 0.02 OHM 1% 1W 2512

LM258DT

LM258DT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

NC7WZ16P6X

NC7WZ16P6X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-6

MC9S08LG16CLF

MC9S08LG16CLF

NXP

IC MCU 8BIT 18KB FLASH 48LQFP

L7815CD2T-TR

L7815CD2T-TR

STMicroelectronics

IC REG LINEAR 15V 1.5A D2PAK

ADAU1761BCPZ

ADAU1761BCPZ

Analog Devices

IC SIGMADSP CODEC PLL 32LFCSP

76SB08ST

76SB08ST

Grayhill Inc.

SWITCH ROCKER DIP SPST 150MA 30V