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STB13NM50N-1

STB13NM50N-1

For Reference Only

Part Number STB13NM50N-1
PNEDA Part # STB13NM50N-1
Description MOSFET N-CH 500V 12A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,958
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB13NM50N-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB13NM50N-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB13NM50N-1, STB13NM50N-1 Datasheet (Total Pages: 18, Size: 578.72 KB)
PDFSTB13NM50N Datasheet Cover
STB13NM50N Datasheet Page 2 STB13NM50N Datasheet Page 3 STB13NM50N Datasheet Page 4 STB13NM50N Datasheet Page 5 STB13NM50N Datasheet Page 6 STB13NM50N Datasheet Page 7 STB13NM50N Datasheet Page 8 STB13NM50N Datasheet Page 9 STB13NM50N Datasheet Page 10 STB13NM50N Datasheet Page 11

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STB13NM50N-1 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds960pF @ 50V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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