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STB12NM50FDT4

STB12NM50FDT4

For Reference Only

Part Number STB12NM50FDT4
PNEDA Part # STB12NM50FDT4
Description MOSFET N-CH 500V 12A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,160
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB12NM50FDT4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB12NM50FDT4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB12NM50FDT4, STB12NM50FDT4 Datasheet (Total Pages: 18, Size: 483.74 KB)
PDFSTB12NM50FDT4 Datasheet Cover
STB12NM50FDT4 Datasheet Page 2 STB12NM50FDT4 Datasheet Page 3 STB12NM50FDT4 Datasheet Page 4 STB12NM50FDT4 Datasheet Page 5 STB12NM50FDT4 Datasheet Page 6 STB12NM50FDT4 Datasheet Page 7 STB12NM50FDT4 Datasheet Page 8 STB12NM50FDT4 Datasheet Page 9 STB12NM50FDT4 Datasheet Page 10 STB12NM50FDT4 Datasheet Page 11

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STB12NM50FDT4 Specifications

ManufacturerSTMicroelectronics
SeriesFDmesh™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 25V
FET Feature-
Power Dissipation (Max)160W (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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