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STB10N65K3

STB10N65K3

For Reference Only

Part Number STB10N65K3
PNEDA Part # STB10N65K3
Description MOSFET N-CH 650V 10A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,456
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 27 - May 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB10N65K3 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB10N65K3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB10N65K3, STB10N65K3 Datasheet (Total Pages: 21, Size: 1,300.42 KB)
PDFSTP10N65K3 Datasheet Cover
STP10N65K3 Datasheet Page 2 STP10N65K3 Datasheet Page 3 STP10N65K3 Datasheet Page 4 STP10N65K3 Datasheet Page 5 STP10N65K3 Datasheet Page 6 STP10N65K3 Datasheet Page 7 STP10N65K3 Datasheet Page 8 STP10N65K3 Datasheet Page 9 STP10N65K3 Datasheet Page 10 STP10N65K3 Datasheet Page 11

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STB10N65K3 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1180pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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