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STB100N6F7

STB100N6F7

For Reference Only

Part Number STB100N6F7
PNEDA Part # STB100N6F7
Description MOSFET N-CH 60V 100A F7 D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,888
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB100N6F7 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB100N6F7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB100N6F7, STB100N6F7 Datasheet (Total Pages: 15, Size: 557.28 KB)
PDFSTB100N6F7 Datasheet Cover
STB100N6F7 Datasheet Page 2 STB100N6F7 Datasheet Page 3 STB100N6F7 Datasheet Page 4 STB100N6F7 Datasheet Page 5 STB100N6F7 Datasheet Page 6 STB100N6F7 Datasheet Page 7 STB100N6F7 Datasheet Page 8 STB100N6F7 Datasheet Page 9 STB100N6F7 Datasheet Page 10 STB100N6F7 Datasheet Page 11

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STB100N6F7 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ F7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1980pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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