SSM6J214FE(TE85L,F
For Reference Only
| Part Number | SSM6J214FE(TE85L,F |
| PNEDA Part # | SSM6J214FE-TE85L-F |
| Description | X34 SMALL LOW ON RESISTANCE PCH |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 79,590 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SSM6J214FE(TE85L Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | SSM6J214FE(TE85L,F |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SSM6J214FE(TE85L,F Datasheet
- where to find SSM6J214FE(TE85L,F
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage SSM6J214FE(TE85L,F
- SSM6J214FE(TE85L,F PDF Datasheet
- SSM6J214FE(TE85L,F Stock
- SSM6J214FE(TE85L,F Pinout
- Datasheet SSM6J214FE(TE85L,F
- SSM6J214FE(TE85L,F Supplier
- Toshiba Semiconductor and Storage Distributor
- SSM6J214FE(TE85L,F Price
- SSM6J214FE(TE85L,F Distributor
SSM6J214FE(TE85L Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSVI |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 10V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 7.9nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | ES6 |
| Package / Case | SOT-563, SOT-666 |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V FET Feature - Power Dissipation (Max) 200mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-323 Package / Case SC-70, SOT-323 |
Manufacturer NXP USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 21mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 588pF @ 15V FET Feature - Power Dissipation (Max) 820mW (Ta), 8.33W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Manufacturer ON Semiconductor Series SuperFET® II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 290mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 1.7mA Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3205pF @ 100V FET Feature - Power Dissipation (Max) 212W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 2.17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V FET Feature - Power Dissipation (Max) 3.2W (Ta), 12.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 95mOhm @ 3A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 360pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 770mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |
