SSM3K01T(TE85L,F)
For Reference Only
| Part Number | SSM3K01T(TE85L,F) |
| PNEDA Part # | SSM3K01T-TE85L-F |
| Description | MOSFET N-CH 30V 3.2A TSM |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 8,766 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SSM3K01T(TE85L Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | SSM3K01T(TE85L,F) |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SSM3K01T(TE85L,F) Datasheet
- where to find SSM3K01T(TE85L,F)
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage SSM3K01T(TE85L,F)
- SSM3K01T(TE85L,F) PDF Datasheet
- SSM3K01T(TE85L,F) Stock
- SSM3K01T(TE85L,F) Pinout
- Datasheet SSM3K01T(TE85L,F)
- SSM3K01T(TE85L,F) Supplier
- Toshiba Semiconductor and Storage Distributor
- SSM3K01T(TE85L,F) Price
- SSM3K01T(TE85L,F) Distributor
SSM3K01T(TE85L Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | π-MOSVI |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 1.6A, 4V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 152pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TSM |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9A (Ta), 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 16mOhm @ 9A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 720pF @ 15V FET Feature - Power Dissipation (Max) 2.4W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-MicroFET (2x2) Package / Case 6-VDFN Exposed Pad |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 44mOhm @ 5A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1180pF @ 15V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SC-74, SOT-457 |
Manufacturer STMicroelectronics Series STripFET™ III FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 60A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 114.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6665pF @ 25V FET Feature - Power Dissipation (Max) 315W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H2PAK-6 Package / Case TO-263-7, D²Pak (6 Leads + Tab) |
Manufacturer Alpha & Omega Semiconductor Inc. Series SDMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 11mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 734pF @ 12.5V FET Feature - Power Dissipation (Max) 2.1W (Ta), 30W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1720pF @ 15V FET Feature - Power Dissipation (Max) 5W (Ta), 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
