Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SSM3J64CTC,L3F

SSM3J64CTC,L3F

For Reference Only

Part Number SSM3J64CTC,L3F
PNEDA Part # SSM3J64CTC-L3F
Description SMALL SIGNAL MOSFET P-CH VDSS:-1
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 80,796
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 30 - Dec 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SSM3J64CTC Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberSSM3J64CTC,L3F
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SSM3J64CTC,L3F Datasheet
  • where to find SSM3J64CTC,L3F
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage SSM3J64CTC,L3F
  • SSM3J64CTC,L3F PDF Datasheet
  • SSM3J64CTC,L3F Stock

  • SSM3J64CTC,L3F Pinout
  • Datasheet SSM3J64CTC,L3F
  • SSM3J64CTC,L3F Supplier

  • Toshiba Semiconductor and Storage Distributor
  • SSM3J64CTC,L3F Price
  • SSM3J64CTC,L3F Distributor

SSM3J64CTC Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVII
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs370mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds50pF @ 10V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageCST3C
Package / CaseSC-101, SOT-883

The Products You May Be Interested In

JAN2N6784U

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/556

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

2.25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.6Ohm @ 2.25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

800mW (Ta), 15W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

18-ULCC (9.14x7.49)

Package / Case

18-CLCC

SPA20N65C3XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

20.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 13.1A, 10V

Vgs(th) (Max) @ Id

3.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

114nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Power Dissipation (Max)

34.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3 Full Pack

ZVP3306ASTZ

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

160mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 18V

FET Feature

-

Power Dissipation (Max)

625mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

IRFU120NPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

9.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

210mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

330pF @ 25V

FET Feature

-

Power Dissipation (Max)

48W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

IXTH48N20T

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

275W (Tc)

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

Recently Sold

7447789002

7447789002

Wurth Electronics

FIXED IND 2.2UH 4.02A 23 MOHM

NL453232T-102J-PF

NL453232T-102J-PF

TDK

FIXED IND 1MH 30MA 40 OHM SMD

NLC453232T-150K-PF

NLC453232T-150K-PF

TDK

FIXED IND 15UH 450MA 700 MOHM

IHLP2525CZERR20M01

IHLP2525CZERR20M01

Vishay Dale

FIXED IND 200NH 24A 3 MOHM SMD

CDRH127/LDNP-220MC

CDRH127/LDNP-220MC

Sumida

FIXED IND 22UH 4.7A 36.4 MOHM

BK0603HS330-T

BK0603HS330-T

Taiyo Yuden

FERRITE BEAD 33 OHM 0201 1LN

74279221111

74279221111

Wurth Electronics

FERRITE BEAD 110 OHM 1206 1LN

403C35E12M00000

403C35E12M00000

CTS Frequency Controls

CRYSTAL 12.0000MHZ 20PF SMD

ABM8-166-114.285MHZ-T2

ABM8-166-114.285MHZ-T2

Abracon

CRYSTAL 114.2850MHZ 18PF SMD

ABM8-26.000MHZ-10-1-U-T

ABM8-26.000MHZ-10-1-U-T

Abracon

CRYSTAL 26.0000MHZ 10PF SMD

A700X157M010ATE015

A700X157M010ATE015

KEMET

CAP ALUM POLY 150UF 20% 10V SMD

UVR1E101MED1TA

UVR1E101MED1TA

Nichicon

CAP ALUM 100UF 20% 25V RADIAL