SS3P6L-M3/86A
For Reference Only
| Part Number | SS3P6L-M3/86A |
| PNEDA Part # | SS3P6L-M3-86A |
| Description | DIODE SCHOTTKY 60V 3A TO277A |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 77,952 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SS3P6L-M3/86A Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | SS3P6L-M3/86A |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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SS3P6L-M3/86A Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | eSMP® |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 60V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 600mV @ 3A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 150µA @ 60V |
| Capacitance @ Vr, F | 200pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN |
| Supplier Device Package | TO-277A (SMPC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 975mV @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 5µA @ 100V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer Infineon Technologies Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 300V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 200µA @ 300V Capacitance @ Vr, F 600pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case Die Supplier Device Package Sawn on foil Operating Temperature - Junction -55°C ~ 175°C |
