SS1FN6-M3/I
For Reference Only
| Part Number | SS1FN6-M3/I |
| PNEDA Part # | SS1FN6-M3-I |
| Description | DIODE SCHOTTKY 60V 1A DO219AB |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 2,052 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SS1FN6-M3/I Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | SS1FN6-M3/I |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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SS1FN6-M3/I Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | eSMP® |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 60V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 530mV @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 800µA @ 60V |
| Capacitance @ Vr, F | 90pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-219AB |
| Supplier Device Package | DO-219AB (SMF) |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 300V Current - Average Rectified (Io) 4A Voltage - Forward (Vf) (Max) @ If 1.3V @ 4A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 5µA @ 300V Capacitance @ Vr, F 80pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 950mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 5µA @ 100V Capacitance @ Vr, F 10pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package Sub SMA Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 150V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 980mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 25ns Current - Reverse Leakage @ Vr 1µA @ 150V Capacitance @ Vr, F 25pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-220AA Supplier Device Package DO-220AA (SMP) Operating Temperature - Junction -55°C ~ 175°C |
