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SQS850EN-T1_GE3

SQS850EN-T1_GE3

For Reference Only

Part Number SQS850EN-T1_GE3
PNEDA Part # SQS850EN-T1_GE3
Description MOSFET N-CH 60V 12A POWERPAK1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,904
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQS850EN-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQS850EN-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQS850EN-T1_GE3, SQS850EN-T1_GE3 Datasheet (Total Pages: 13, Size: 621.67 KB)
PDFSQS850EN-T1_GE3 Datasheet Cover
SQS850EN-T1_GE3 Datasheet Page 2 SQS850EN-T1_GE3 Datasheet Page 3 SQS850EN-T1_GE3 Datasheet Page 4 SQS850EN-T1_GE3 Datasheet Page 5 SQS850EN-T1_GE3 Datasheet Page 6 SQS850EN-T1_GE3 Datasheet Page 7 SQS850EN-T1_GE3 Datasheet Page 8 SQS850EN-T1_GE3 Datasheet Page 9 SQS850EN-T1_GE3 Datasheet Page 10 SQS850EN-T1_GE3 Datasheet Page 11

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SQS850EN-T1_GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs21.5mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2021pF @ 30V
FET Feature-
Power Dissipation (Max)33W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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