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SQS840EN-T1_GE3

SQS840EN-T1_GE3

For Reference Only

Part Number SQS840EN-T1_GE3
PNEDA Part # SQS840EN-T1_GE3
Description MOSFET N-CH 40V 16A TO263
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,428
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQS840EN-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQS840EN-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQS840EN-T1_GE3, SQS840EN-T1_GE3 Datasheet (Total Pages: 13, Size: 624.16 KB)
PDFSQS840EN-T1_GE3 Datasheet Cover
SQS840EN-T1_GE3 Datasheet Page 2 SQS840EN-T1_GE3 Datasheet Page 3 SQS840EN-T1_GE3 Datasheet Page 4 SQS840EN-T1_GE3 Datasheet Page 5 SQS840EN-T1_GE3 Datasheet Page 6 SQS840EN-T1_GE3 Datasheet Page 7 SQS840EN-T1_GE3 Datasheet Page 8 SQS840EN-T1_GE3 Datasheet Page 9 SQS840EN-T1_GE3 Datasheet Page 10 SQS840EN-T1_GE3 Datasheet Page 11

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SQS840EN-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs20mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1031pF @ 20V
FET Feature-
Power Dissipation (Max)33W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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