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SQS482EN-T1_GE3

SQS482EN-T1_GE3

For Reference Only

Part Number SQS482EN-T1_GE3
PNEDA Part # SQS482EN-T1_GE3
Description MOSFET N-CH 30V 16A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,880
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQS482EN-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQS482EN-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQS482EN-T1_GE3, SQS482EN-T1_GE3 Datasheet (Total Pages: 13, Size: 557.58 KB)
PDFSQS482EN-T1_GE3 Datasheet Cover
SQS482EN-T1_GE3 Datasheet Page 2 SQS482EN-T1_GE3 Datasheet Page 3 SQS482EN-T1_GE3 Datasheet Page 4 SQS482EN-T1_GE3 Datasheet Page 5 SQS482EN-T1_GE3 Datasheet Page 6 SQS482EN-T1_GE3 Datasheet Page 7 SQS482EN-T1_GE3 Datasheet Page 8 SQS482EN-T1_GE3 Datasheet Page 9 SQS482EN-T1_GE3 Datasheet Page 10 SQS482EN-T1_GE3 Datasheet Page 11

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SQS482EN-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1865pF @ 25V
FET Feature-
Power Dissipation (Max)62W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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