SQP25N15-52_GE3
For Reference Only
| Part Number | SQP25N15-52_GE3 |
| PNEDA Part # | SQP25N15-52_GE3 |
| Description | MOSFET N-CH 150V 25A TO220AB |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 10,692 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SQP25N15-52_GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SQP25N15-52_GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SQP25N15-52_GE3 Datasheet
- where to find SQP25N15-52_GE3
- Vishay Siliconix
- Vishay Siliconix SQP25N15-52_GE3
- SQP25N15-52_GE3 PDF Datasheet
- SQP25N15-52_GE3 Stock
- SQP25N15-52_GE3 Pinout
- Datasheet SQP25N15-52_GE3
- SQP25N15-52_GE3 Supplier
- Vishay Siliconix Distributor
- SQP25N15-52_GE3 Price
- SQP25N15-52_GE3 Distributor
SQP25N15-52_GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2360pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
The Products You May Be Interested In
|
Manufacturer Microchip Technology Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 120mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 0V Rds On (Max) @ Id, Vgs 25Ohm @ 120mA, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92 (TO-226) Package / Case TO-226-3, TO-92-3 (TO-226AA) |
Manufacturer Renesas Electronics America Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs 156mOhm @ 6.7A, 18V Vgs(th) (Max) @ Id 5.6V @ 3.33mA Gate Charge (Qg) (Max) @ Vgs 38nC @ 18V Vgs (Max) +22V, -4V Input Capacitance (Ciss) (Max) @ Vds 460pF @ 500V FET Feature - Power Dissipation (Max) 103W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247N Package / Case TO-247-3 |
Manufacturer Transphorm Series - FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 41mOhm @ 32A, 8V Vgs(th) (Max) @ Id 2.65V @ 700µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 8V Vgs (Max) ±18V Input Capacitance (Ciss) (Max) @ Vds 2197pF @ 400V FET Feature - Power Dissipation (Max) 178W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 145mOhm @ 12A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2060pF @ 25V FET Feature - Power Dissipation (Max) 37W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Isolated Tab Package / Case TO-220-3 Full Pack, Isolated Tab |
