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SQM35N30-97_GE3

SQM35N30-97_GE3

For Reference Only

Part Number SQM35N30-97_GE3
PNEDA Part # SQM35N30-97_GE3
Description MOSFET N-CH 300V 35A TO263
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,610
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQM35N30-97_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQM35N30-97_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQM35N30-97_GE3, SQM35N30-97_GE3 Datasheet (Total Pages: 10, Size: 230.06 KB)
PDFSQM35N30-97_GE3 Datasheet Cover
SQM35N30-97_GE3 Datasheet Page 2 SQM35N30-97_GE3 Datasheet Page 3 SQM35N30-97_GE3 Datasheet Page 4 SQM35N30-97_GE3 Datasheet Page 5 SQM35N30-97_GE3 Datasheet Page 6 SQM35N30-97_GE3 Datasheet Page 7 SQM35N30-97_GE3 Datasheet Page 8 SQM35N30-97_GE3 Datasheet Page 9 SQM35N30-97_GE3 Datasheet Page 10

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SQM35N30-97_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs97mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5650pF @ 25V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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