SQM200N04-1M1L_GE3
For Reference Only
| Part Number | SQM200N04-1M1L_GE3 |
| PNEDA Part # | SQM200N04-1M1L_GE3 |
| Description | MOSFET N-CH 40V 200A TO-263 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 6,696 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 31 - Apr 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SQM200N04-1M1L_GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SQM200N04-1M1L_GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SQM200N04-1M1L_GE3 Datasheet
- where to find SQM200N04-1M1L_GE3
- Vishay Siliconix
- Vishay Siliconix SQM200N04-1M1L_GE3
- SQM200N04-1M1L_GE3 PDF Datasheet
- SQM200N04-1M1L_GE3 Stock
- SQM200N04-1M1L_GE3 Pinout
- Datasheet SQM200N04-1M1L_GE3
- SQM200N04-1M1L_GE3 Supplier
- Vishay Siliconix Distributor
- SQM200N04-1M1L_GE3 Price
- SQM200N04-1M1L_GE3 Distributor
SQM200N04-1M1L_GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 413nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 20655pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1785pF @ 20V FET Feature - Power Dissipation (Max) 5W (Ta), 34.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer Cree/Wolfspeed Series Z-FET™ FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 52mOhm @ 40A, 20V Vgs(th) (Max) @ Id 2.8V @ 10mA Gate Charge (Qg) (Max) @ Vgs 115nC @ 20V Vgs (Max) +25V, -10V Input Capacitance (Ciss) (Max) @ Vds 1893pF @ 1000V FET Feature - Power Dissipation (Max) 330W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 20mOhm @ 8A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2320pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer STMicroelectronics Series DeepGATE™, STripFET™ VII FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 193nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 50V FET Feature - Power Dissipation (Max) 315W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H²PAK Package / Case TO-263-7, D²Pak (6 Leads + Tab) |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 61A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V Rds On (Max) @ Id, Vgs 12.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2417pF @ 15V FET Feature - Power Dissipation (Max) 87W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
