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SQM120P10_10M1LGE3

SQM120P10_10M1LGE3

For Reference Only

Part Number SQM120P10_10M1LGE3
PNEDA Part # SQM120P10_10M1LGE3
Description MOSFET P-CH 100V 120A TO263
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,086
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 23 - Mar 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQM120P10_10M1LGE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQM120P10_10M1LGE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQM120P10_10M1LGE3, SQM120P10_10M1LGE3 Datasheet (Total Pages: 9, Size: 196.2 KB)
PDFSQM120P10_10M1LGE3 Datasheet Cover
SQM120P10_10M1LGE3 Datasheet Page 2 SQM120P10_10M1LGE3 Datasheet Page 3 SQM120P10_10M1LGE3 Datasheet Page 4 SQM120P10_10M1LGE3 Datasheet Page 5 SQM120P10_10M1LGE3 Datasheet Page 6 SQM120P10_10M1LGE3 Datasheet Page 7 SQM120P10_10M1LGE3 Datasheet Page 8 SQM120P10_10M1LGE3 Datasheet Page 9

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SQM120P10_10M1LGE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs190nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9000pF @ 25V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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