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SQJ951EP-T1_GE3

SQJ951EP-T1_GE3

For Reference Only

Part Number SQJ951EP-T1_GE3
PNEDA Part # SQJ951EP-T1_GE3
Description MOSFET 2P-CH 30V 30A PPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,138
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ951EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ951EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ951EP-T1_GE3, SQJ951EP-T1_GE3 Datasheet (Total Pages: 10, Size: 166.84 KB)
PDFSQJ951EP-T1_GE3 Datasheet Cover
SQJ951EP-T1_GE3 Datasheet Page 2 SQJ951EP-T1_GE3 Datasheet Page 3 SQJ951EP-T1_GE3 Datasheet Page 4 SQJ951EP-T1_GE3 Datasheet Page 5 SQJ951EP-T1_GE3 Datasheet Page 6 SQJ951EP-T1_GE3 Datasheet Page 7 SQJ951EP-T1_GE3 Datasheet Page 8 SQJ951EP-T1_GE3 Datasheet Page 9 SQJ951EP-T1_GE3 Datasheet Page 10

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SQJ951EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A
Rds On (Max) @ Id, Vgs17mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1680pF @ 10V
Power - Max56W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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