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SQJ942EP-T1_GE3

SQJ942EP-T1_GE3

For Reference Only

Part Number SQJ942EP-T1_GE3
PNEDA Part # SQJ942EP-T1_GE3
Description MOSFET 2 N-CH 40V POWERPAK SO8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 25,680
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ942EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ942EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ942EP-T1_GE3, SQJ942EP-T1_GE3 Datasheet (Total Pages: 17, Size: 315.96 KB)
PDFSQJ942EP-T1_GE3 Datasheet Cover
SQJ942EP-T1_GE3 Datasheet Page 2 SQJ942EP-T1_GE3 Datasheet Page 3 SQJ942EP-T1_GE3 Datasheet Page 4 SQJ942EP-T1_GE3 Datasheet Page 5 SQJ942EP-T1_GE3 Datasheet Page 6 SQJ942EP-T1_GE3 Datasheet Page 7 SQJ942EP-T1_GE3 Datasheet Page 8 SQJ942EP-T1_GE3 Datasheet Page 9 SQJ942EP-T1_GE3 Datasheet Page 10 SQJ942EP-T1_GE3 Datasheet Page 11

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SQJ942EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C15A (Tc), 45A (Tc)
Rds On (Max) @ Id, Vgs22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19.7nC @ 10V, 33.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds809pF @ 20V, 1451pF @ 20V
Power - Max17W, 48W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8
Supplier Device PackagePowerPAK® SO-8

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