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SQJ910AEP-T1_GE3

SQJ910AEP-T1_GE3

For Reference Only

Part Number SQJ910AEP-T1_GE3
PNEDA Part # SQJ910AEP-T1_GE3
Description MOSFET 2 N-CH 30V POWERPAK SO8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,462
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ910AEP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ910AEP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ910AEP-T1_GE3, SQJ910AEP-T1_GE3 Datasheet (Total Pages: 10, Size: 171.48 KB)
PDFSQJ910AEP-T1_GE3 Datasheet Cover
SQJ910AEP-T1_GE3 Datasheet Page 2 SQJ910AEP-T1_GE3 Datasheet Page 3 SQJ910AEP-T1_GE3 Datasheet Page 4 SQJ910AEP-T1_GE3 Datasheet Page 5 SQJ910AEP-T1_GE3 Datasheet Page 6 SQJ910AEP-T1_GE3 Datasheet Page 7 SQJ910AEP-T1_GE3 Datasheet Page 8 SQJ910AEP-T1_GE3 Datasheet Page 9 SQJ910AEP-T1_GE3 Datasheet Page 10

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SQJ910AEP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1869pF @ 15V
Power - Max48W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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