SQJ204EP-T1_GE3
For Reference Only
Part Number | SQJ204EP-T1_GE3 |
PNEDA Part # | SQJ204EP-T1_GE3 |
Description | MOSFET DUAL N-CH 12V PPAK SO-8L |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 6,858 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
SQJ204EP-T1_GE3 Resources
Brand | Vishay Siliconix |
ECAD Module | |
Mfr. Part Number | SQJ204EP-T1_GE3 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SQJ204EP-T1_GE3 Datasheet
- where to find SQJ204EP-T1_GE3
- Vishay Siliconix
- Vishay Siliconix SQJ204EP-T1_GE3
- SQJ204EP-T1_GE3 PDF Datasheet
- SQJ204EP-T1_GE3 Stock
- SQJ204EP-T1_GE3 Pinout
- Datasheet SQJ204EP-T1_GE3
- SQJ204EP-T1_GE3 Supplier
- Vishay Siliconix Distributor
- SQJ204EP-T1_GE3 Price
- SQJ204EP-T1_GE3 Distributor
SQJ204EP-T1_GE3 Specifications
Manufacturer | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
FET Type | 2 N-Channel (Dual) Asymmetrical |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc), 60A (Tc) |
Rds On (Max) @ Id, Vgs | 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V, 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 6V, 3700pF @ 6V |
Power - Max | 27W (Tc), 48W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 Dual |
Supplier Device Package | PowerPAK® SO-8 Dual Asymmetric |
The Products You May Be Interested In
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2A, 1.5A Rds On (Max) @ Id, Vgs 136mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 128pF @ 10V Power - Max 800mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-SMD, Flat Leads Supplier Device Package 6-MCPH |
Diodes Incorporated Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 9.2A (Ta), 33.2A (Tc) Rds On (Max) @ Id, Vgs 19mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 864pF @ 30V Power - Max 2.5W (Ta), 37.5W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerTDFN Supplier Device Package PowerDI5060-8 |
Microsemi Manufacturer Microsemi Corporation Series - FET Type 4 N-Channel (H-Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 37A Rds On (Max) @ Id, Vgs 120mOhm @ 18.5A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4367pF @ 25V Power - Max 312W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP3 Supplier Device Package SP3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 220mA Rds On (Max) @ Id, Vgs 4Ohm @ 220mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V Power - Max 300mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-88 (SC-70-6) |
EPC Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 9.5A, 38A Rds On (Max) @ Id, Vgs 14.5mOhm @ 20A, 5V Vgs(th) (Max) @ Id 2.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 300pF @ 40V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |