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SQJ204EP-T1_GE3

SQJ204EP-T1_GE3

For Reference Only

Part Number SQJ204EP-T1_GE3
PNEDA Part # SQJ204EP-T1_GE3
Description MOSFET DUAL N-CH 12V PPAK SO-8L
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,858
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ204EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ204EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ204EP-T1_GE3, SQJ204EP-T1_GE3 Datasheet (Total Pages: 15, Size: 434.26 KB)
PDFSQJ204EP-T1_GE3 Datasheet Cover
SQJ204EP-T1_GE3 Datasheet Page 2 SQJ204EP-T1_GE3 Datasheet Page 3 SQJ204EP-T1_GE3 Datasheet Page 4 SQJ204EP-T1_GE3 Datasheet Page 5 SQJ204EP-T1_GE3 Datasheet Page 6 SQJ204EP-T1_GE3 Datasheet Page 7 SQJ204EP-T1_GE3 Datasheet Page 8 SQJ204EP-T1_GE3 Datasheet Page 9 SQJ204EP-T1_GE3 Datasheet Page 10 SQJ204EP-T1_GE3 Datasheet Page 11

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SQJ204EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureStandard
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V, 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 6V, 3700pF @ 6V
Power - Max27W (Tc), 48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual Asymmetric

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Drain to Source Voltage (Vdss)

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Vgs(th) (Max) @ Id

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Power - Max

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Operating Temperature

-55°C ~ 175°C (TJ)

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