SQD97N06-6M3L_GE3

For Reference Only
Part Number | SQD97N06-6M3L_GE3 |
PNEDA Part # | SQD97N06-6M3L_GE3 |
Description | MOSFET N-CH 60V 50A TO252 |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 4,554 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SQD97N06-6M3L_GE3 Resources
Brand | Vishay Siliconix |
ECAD Module |
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Mfr. Part Number | SQD97N06-6M3L_GE3 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
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SQD97N06-6M3L_GE3 Specifications
Manufacturer | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 97A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.3mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 125nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6060pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 136W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252AA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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