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SQD97N06-6M3L_GE3

SQD97N06-6M3L_GE3

For Reference Only

Part Number SQD97N06-6M3L_GE3
PNEDA Part # SQD97N06-6M3L_GE3
Description MOSFET N-CH 60V 50A TO252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,554
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQD97N06-6M3L_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQD97N06-6M3L_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQD97N06-6M3L_GE3, SQD97N06-6M3L_GE3 Datasheet (Total Pages: 9, Size: 170.67 KB)
PDFSQD97N06-6M3L_GE3 Datasheet Cover
SQD97N06-6M3L_GE3 Datasheet Page 2 SQD97N06-6M3L_GE3 Datasheet Page 3 SQD97N06-6M3L_GE3 Datasheet Page 4 SQD97N06-6M3L_GE3 Datasheet Page 5 SQD97N06-6M3L_GE3 Datasheet Page 6 SQD97N06-6M3L_GE3 Datasheet Page 7 SQD97N06-6M3L_GE3 Datasheet Page 8 SQD97N06-6M3L_GE3 Datasheet Page 9

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SQD97N06-6M3L_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C97A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs125nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6060pF @ 25V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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TO-252-3, DPak (2 Leads + Tab), SC-63

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