Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQD97N06-6M3L_GE3

SQD97N06-6M3L_GE3

For Reference Only

Part Number SQD97N06-6M3L_GE3
PNEDA Part # SQD97N06-6M3L_GE3
Description MOSFET N-CH 60V 50A TO252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,554
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQD97N06-6M3L_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQD97N06-6M3L_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQD97N06-6M3L_GE3, SQD97N06-6M3L_GE3 Datasheet (Total Pages: 9, Size: 170.67 KB)
PDFSQD97N06-6M3L_GE3 Datasheet Cover
SQD97N06-6M3L_GE3 Datasheet Page 2 SQD97N06-6M3L_GE3 Datasheet Page 3 SQD97N06-6M3L_GE3 Datasheet Page 4 SQD97N06-6M3L_GE3 Datasheet Page 5 SQD97N06-6M3L_GE3 Datasheet Page 6 SQD97N06-6M3L_GE3 Datasheet Page 7 SQD97N06-6M3L_GE3 Datasheet Page 8 SQD97N06-6M3L_GE3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SQD97N06-6M3L_GE3 Datasheet
  • where to find SQD97N06-6M3L_GE3
  • Vishay Siliconix

  • Vishay Siliconix SQD97N06-6M3L_GE3
  • SQD97N06-6M3L_GE3 PDF Datasheet
  • SQD97N06-6M3L_GE3 Stock

  • SQD97N06-6M3L_GE3 Pinout
  • Datasheet SQD97N06-6M3L_GE3
  • SQD97N06-6M3L_GE3 Supplier

  • Vishay Siliconix Distributor
  • SQD97N06-6M3L_GE3 Price
  • SQD97N06-6M3L_GE3 Distributor

SQD97N06-6M3L_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C97A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs125nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6060pF @ 25V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

66mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

4.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1.465nF @ 25V

FET Feature

-

Power Dissipation (Max)

170W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AA

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

IXYS

Series

TrenchMV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

64A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1420pF @ 25V

FET Feature

-

Power Dissipation (Max)

130W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NTMFS4C10NBT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16.4A (Ta), 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.95mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

987pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.51W (Ta), 23.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

IRL3716STRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

79nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5090pF @ 10V

FET Feature

-

Power Dissipation (Max)

210W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

R6020JNXC7G

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Rds On (Max) @ Id, Vgs

234mOhm @ 10A, 15V

Vgs(th) (Max) @ Id

7V @ 3.5mA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 15V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 100V

FET Feature

-

Power Dissipation (Max)

76W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FM

Package / Case

TO-220-3 Full Pack

Recently Sold

USB3340-EZK-TR

USB3340-EZK-TR

Microchip Technology

IC TRANSCEIVER 1/1 32QFN

IHLP6767GZER8R2M11

IHLP6767GZER8R2M11

Vishay Dale

FIXED IND 8.2UH 21A 8.1 MOHM SMD

SI3420A-TP

SI3420A-TP

Micro Commercial Co

MOSFET N-CH 20V 6A SOT-23

IRF3205ZPBF

IRF3205ZPBF

Infineon Technologies

MOSFET N-CH 55V 75A TO-220AB

A42MX09-PQ100

A42MX09-PQ100

Microsemi

IC FPGA 83 I/O 100QFP

1.5KE33A

1.5KE33A

ON Semiconductor

TVS DIODE 28.2V 45.7V AXIAL

FMR0H104ZF

FMR0H104ZF

KEMET

CAPACITOR 0.1F 5.5V RADIAL

0ZCJ0025AF2E

0ZCJ0025AF2E

Bel Fuse

PTC RESET FUSE 24V 250MA 1206

WSL0603R1000FEA18

WSL0603R1000FEA18

Vishay Dale

RES 0.1 OHM 1% 1/5W 0603

IR2214SSTRPBF

IR2214SSTRPBF

Infineon Technologies

IC DVR HALF BRIDGE IC 24SSOP

AD5934YRSZ

AD5934YRSZ

Analog Devices

IC DDS 16.776MHZ 12BIT 16SSOP

LT1963AEFE-3.3#TRPBF

LT1963AEFE-3.3#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR 3.3V 1.5A 16TSSOP