Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQD50N05-11L_GE3

SQD50N05-11L_GE3

For Reference Only

Part Number SQD50N05-11L_GE3
PNEDA Part # SQD50N05-11L_GE3
Description MOSFET N-CH 50V 50A TO252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,004
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQD50N05-11L_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQD50N05-11L_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQD50N05-11L_GE3, SQD50N05-11L_GE3 Datasheet (Total Pages: 10, Size: 190.92 KB)
PDFSQD50N05-11L_GE3 Datasheet Cover
SQD50N05-11L_GE3 Datasheet Page 2 SQD50N05-11L_GE3 Datasheet Page 3 SQD50N05-11L_GE3 Datasheet Page 4 SQD50N05-11L_GE3 Datasheet Page 5 SQD50N05-11L_GE3 Datasheet Page 6 SQD50N05-11L_GE3 Datasheet Page 7 SQD50N05-11L_GE3 Datasheet Page 8 SQD50N05-11L_GE3 Datasheet Page 9 SQD50N05-11L_GE3 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SQD50N05-11L_GE3 Datasheet
  • where to find SQD50N05-11L_GE3
  • Vishay Siliconix

  • Vishay Siliconix SQD50N05-11L_GE3
  • SQD50N05-11L_GE3 PDF Datasheet
  • SQD50N05-11L_GE3 Stock

  • SQD50N05-11L_GE3 Pinout
  • Datasheet SQD50N05-11L_GE3
  • SQD50N05-11L_GE3 Supplier

  • Vishay Siliconix Distributor
  • SQD50N05-11L_GE3 Price
  • SQD50N05-11L_GE3 Distributor

SQD50N05-11L_GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs11mOhm @ 45A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs52nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2106pF @ 25V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IRL3715LPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

54A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1060pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

PMZB290UNE2YL

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

320mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

46pF @ 10V

FET Feature

-

Power Dissipation (Max)

350mW (Ta), 5.43W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN1006B-3

Package / Case

3-XFDFN

NTLJS2103PTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

40mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1157pF @ 6V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WDFN (2x2)

Package / Case

6-WDFN Exposed Pad

IRCZ34PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

50mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

Current Sensing

Power Dissipation (Max)

88W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-5

Package / Case

TO-220-5

IRL3715

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

54A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1060pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

LTC1564IG#TRPBF

LTC1564IG#TRPBF

Linear Technology/Analog Devices

IC FILTR 150KHZ ANTIALIAS 16SSOP

SMA6J33A-TR

SMA6J33A-TR

STMicroelectronics

TVS DIODE 33V 60.8V SMA

PIC18F6410-I/PT

PIC18F6410-I/PT

Microchip Technology

IC MCU 8BIT 16KB FLASH 64TQFP

NTJD4001NT1G

NTJD4001NT1G

ON Semiconductor

MOSFET 2N-CH 30V 0.25A SOT-363

NE3509M04-A

NE3509M04-A

CEL

FET RF 4V 2GHZ 4-SMINI

AK4480EF

AK4480EF

AKM Semiconductor Inc.

IC DAC/AUDIO 32BIT 216K 30VSOP

D2-24044-MR

D2-24044-MR

Renesas Electronics America Inc.

IC DGTL AMP AUDIO PWR D 38HTSSOP

LT1963AEST-3.3#PBF

LT1963AEST-3.3#PBF

Linear Technology/Analog Devices

IC REG LINEAR 3.3V 1.5A SOT223-3

ARF445

ARF445

Microsemi

PWR MOSFET RF N-CH 900V TO-247AD

MAX1111CPE+

MAX1111CPE+

Maxim Integrated

IC ADC 8BIT SAR 16DIP

CC12H2A-TR

CC12H2A-TR

Eaton - Electronics Division

FUSE BOARD MOUNT 2A 63VDC 1206

ATMEGA328P-15AZ

ATMEGA328P-15AZ

Microchip Technology

IC MCU 8BIT 32KB FLASH 32TQFP