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SQD50N05-11L_GE3

SQD50N05-11L_GE3

For Reference Only

Part Number SQD50N05-11L_GE3
PNEDA Part # SQD50N05-11L_GE3
Description MOSFET N-CH 50V 50A TO252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,004
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQD50N05-11L_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQD50N05-11L_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQD50N05-11L_GE3, SQD50N05-11L_GE3 Datasheet (Total Pages: 10, Size: 190.92 KB)
PDFSQD50N05-11L_GE3 Datasheet Cover
SQD50N05-11L_GE3 Datasheet Page 2 SQD50N05-11L_GE3 Datasheet Page 3 SQD50N05-11L_GE3 Datasheet Page 4 SQD50N05-11L_GE3 Datasheet Page 5 SQD50N05-11L_GE3 Datasheet Page 6 SQD50N05-11L_GE3 Datasheet Page 7 SQD50N05-11L_GE3 Datasheet Page 8 SQD50N05-11L_GE3 Datasheet Page 9 SQD50N05-11L_GE3 Datasheet Page 10

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SQD50N05-11L_GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs11mOhm @ 45A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs52nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2106pF @ 25V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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