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SQD50N04-5M6_GE3

SQD50N04-5M6_GE3

For Reference Only

Part Number SQD50N04-5M6_GE3
PNEDA Part # SQD50N04-5M6_GE3
Description MOSFET N-CH 40V 50A TO-252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQD50N04-5M6_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQD50N04-5M6_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQD50N04-5M6_GE3, SQD50N04-5M6_GE3 Datasheet (Total Pages: 9, Size: 162.97 KB)
PDFSQD50N04-5M6_GE3 Datasheet Cover
SQD50N04-5M6_GE3 Datasheet Page 2 SQD50N04-5M6_GE3 Datasheet Page 3 SQD50N04-5M6_GE3 Datasheet Page 4 SQD50N04-5M6_GE3 Datasheet Page 5 SQD50N04-5M6_GE3 Datasheet Page 6 SQD50N04-5M6_GE3 Datasheet Page 7 SQD50N04-5M6_GE3 Datasheet Page 8 SQD50N04-5M6_GE3 Datasheet Page 9

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SQD50N04-5M6_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs85nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4000pF @ 25V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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