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SQD40P10-40L_GE3

SQD40P10-40L_GE3

For Reference Only

Part Number SQD40P10-40L_GE3
PNEDA Part # SQD40P10-40L_GE3
Description MOSFET P-CHAN 100V TO252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 35,184
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQD40P10-40L_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQD40P10-40L_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQD40P10-40L_GE3, SQD40P10-40L_GE3 Datasheet (Total Pages: 9, Size: 159.77 KB)
PDFSQD40P10-40L_GE3 Datasheet Cover
SQD40P10-40L_GE3 Datasheet Page 2 SQD40P10-40L_GE3 Datasheet Page 3 SQD40P10-40L_GE3 Datasheet Page 4 SQD40P10-40L_GE3 Datasheet Page 5 SQD40P10-40L_GE3 Datasheet Page 6 SQD40P10-40L_GE3 Datasheet Page 7 SQD40P10-40L_GE3 Datasheet Page 8 SQD40P10-40L_GE3 Datasheet Page 9

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SQD40P10-40L_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs40mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs144nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5540pF @ 15V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Rds On (Max) @ Id, Vgs

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Input Capacitance (Ciss) (Max) @ Vds

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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