SQD40131EL_GE3
For Reference Only
Part Number | SQD40131EL_GE3 |
PNEDA Part # | SQD40131EL_GE3 |
Description | MOSFET P-CHAN 40V D-S TO-252 |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 23,718 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
SQD40131EL_GE3 Resources
Brand | Vishay Siliconix |
ECAD Module | |
Mfr. Part Number | SQD40131EL_GE3 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SQD40131EL_GE3 Datasheet
- where to find SQD40131EL_GE3
- Vishay Siliconix
- Vishay Siliconix SQD40131EL_GE3
- SQD40131EL_GE3 PDF Datasheet
- SQD40131EL_GE3 Stock
- SQD40131EL_GE3 Pinout
- Datasheet SQD40131EL_GE3
- SQD40131EL_GE3 Supplier
- Vishay Siliconix Distributor
- SQD40131EL_GE3 Price
- SQD40131EL_GE3 Distributor
SQD40131EL_GE3 Specifications
Manufacturer | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 11.5mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 115nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6600pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 62W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252AA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
The Products You May Be Interested In
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V FET Feature - Power Dissipation (Max) 3.1W (Ta), 130W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 75mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.3nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 443pF @ 16V FET Feature - Power Dissipation (Max) 1.4W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
STMicroelectronics Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 3A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 270pF @ 100V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
ON Semiconductor Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 47A (Ta), 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.85mOhm @ 47A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 242nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 17500pF @ 20V FET Feature - Power Dissipation (Max) 2.7W (Ta), 113W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Power56 Package / Case 8-PowerTDFN |
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 7.2mOhm @ 80A, 10V Vgs(th) (Max) @ Id 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4910pF @ 50V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |