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SQD19P06-60L_T4GE3

SQD19P06-60L_T4GE3

For Reference Only

Part Number SQD19P06-60L_T4GE3
PNEDA Part # SQD19P06-60L_T4GE3
Description MOSFET P-CH 60V 20A TO252AA
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,852
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQD19P06-60L_T4GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQD19P06-60L_T4GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQD19P06-60L_T4GE3, SQD19P06-60L_T4GE3 Datasheet (Total Pages: 9, Size: 159.19 KB)
PDFSQD19P06-60L_T4GE3 Datasheet Cover
SQD19P06-60L_T4GE3 Datasheet Page 2 SQD19P06-60L_T4GE3 Datasheet Page 3 SQD19P06-60L_T4GE3 Datasheet Page 4 SQD19P06-60L_T4GE3 Datasheet Page 5 SQD19P06-60L_T4GE3 Datasheet Page 6 SQD19P06-60L_T4GE3 Datasheet Page 7 SQD19P06-60L_T4GE3 Datasheet Page 8 SQD19P06-60L_T4GE3 Datasheet Page 9

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SQD19P06-60L_T4GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs55mOhm @ 19A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1490pF @ 25V
FET Feature-
Power Dissipation (Max)46W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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