Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQD10N30-330H_GE3

SQD10N30-330H_GE3

For Reference Only

Part Number SQD10N30-330H_GE3
PNEDA Part # SQD10N30-330H_GE3
Description MOSFET N-CH 300V 10A TO252AA
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 17,058
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQD10N30-330H_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQD10N30-330H_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQD10N30-330H_GE3, SQD10N30-330H_GE3 Datasheet (Total Pages: 10, Size: 203.92 KB)
PDFSQD10N30-330H_GE3 Datasheet Cover
SQD10N30-330H_GE3 Datasheet Page 2 SQD10N30-330H_GE3 Datasheet Page 3 SQD10N30-330H_GE3 Datasheet Page 4 SQD10N30-330H_GE3 Datasheet Page 5 SQD10N30-330H_GE3 Datasheet Page 6 SQD10N30-330H_GE3 Datasheet Page 7 SQD10N30-330H_GE3 Datasheet Page 8 SQD10N30-330H_GE3 Datasheet Page 9 SQD10N30-330H_GE3 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SQD10N30-330H_GE3 Datasheet
  • where to find SQD10N30-330H_GE3
  • Vishay Siliconix

  • Vishay Siliconix SQD10N30-330H_GE3
  • SQD10N30-330H_GE3 PDF Datasheet
  • SQD10N30-330H_GE3 Stock

  • SQD10N30-330H_GE3 Pinout
  • Datasheet SQD10N30-330H_GE3
  • SQD10N30-330H_GE3 Supplier

  • Vishay Siliconix Distributor
  • SQD10N30-330H_GE3 Price
  • SQD10N30-330H_GE3 Distributor

SQD10N30-330H_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs330mOhm @ 14A, 10V
Vgs(th) (Max) @ Id4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2190pF @ 25V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

SQD50N05-11L_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 45A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

52nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2106pF @ 25V

FET Feature

-

Power Dissipation (Max)

75W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SUD19N20-90-T4-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

90mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 25V

FET Feature

-

Power Dissipation (Max)

3W (Ta), 136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFH5053TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

9.3A (Ta), 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id

4.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1510pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 8.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (5x6) Single Die

Package / Case

8-PowerVDFN

IXTA2N100

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

825pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

3LP01M-TL-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4V

Rds On (Max) @ Id, Vgs

10.4Ohm @ 50mA, 4V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

1.43nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

7.5pF @ 10V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-MCP

Package / Case

SC-70, SOT-323

Recently Sold

RCLAMP0502N.TCT

RCLAMP0502N.TCT

Semtech

TVS DIODE 6.5V 30V SLP1210N6

ZXMN3A01FTA

ZXMN3A01FTA

Diodes Incorporated

MOSFET N-CH 30V 1.8A SOT23-3

ADP122AUJZ-3.3-R7

ADP122AUJZ-3.3-R7

Analog Devices

IC REG LINEAR 3.3V 300MA TSOT5

MM74HC14M

MM74HC14M

ON Semiconductor

IC INVERTER SCHMITT 6CH 14SOIC

A42MX09-PQ100

A42MX09-PQ100

Microsemi

IC FPGA 83 I/O 100QFP

3362W-1-103

3362W-1-103

Bourns

TRIMMER 10K OHM 0.5W PC PIN SIDE

ES1JAF

ES1JAF

ON Semiconductor

DIODE GEN PURP 600V 1A DO214AD

LT8640EUDC#TRPBF

LT8640EUDC#TRPBF

Linear Technology/Analog Devices

IC REG BUCK ADJUSTABLE 5A 20QFN

MAX202EEUE

MAX202EEUE

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16TSSOP

CP2103-GMR

CP2103-GMR

Silicon Labs

IC CTRLR BRIDGE USB-UART 28MLP

RT9193-33GB

RT9193-33GB

Richtek USA Inc.

IC REG LINEAR 3.3V 300MA SOT23-5

GD25Q80CSIG

GD25Q80CSIG

GigaDevice Semiconductor (HK) Limited

NOR FLASH