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SQA410EJ-T1_GE3

SQA410EJ-T1_GE3

For Reference Only

Part Number SQA410EJ-T1_GE3
PNEDA Part # SQA410EJ-T1_GE3
Description MOSFET N-CH 20V 7.8A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,410
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQA410EJ-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQA410EJ-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQA410EJ-T1_GE3, SQA410EJ-T1_GE3 Datasheet (Total Pages: 9, Size: 205.47 KB)
PDFSQA410EJ-T1_GE3 Datasheet Cover
SQA410EJ-T1_GE3 Datasheet Page 2 SQA410EJ-T1_GE3 Datasheet Page 3 SQA410EJ-T1_GE3 Datasheet Page 4 SQA410EJ-T1_GE3 Datasheet Page 5 SQA410EJ-T1_GE3 Datasheet Page 6 SQA410EJ-T1_GE3 Datasheet Page 7 SQA410EJ-T1_GE3 Datasheet Page 8 SQA410EJ-T1_GE3 Datasheet Page 9

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SQA410EJ-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C7.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs28mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds485pF @ 10V
FET Feature-
Power Dissipation (Max)13.6W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

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