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SQA403EJ-T1_GE3

SQA403EJ-T1_GE3

For Reference Only

Part Number SQA403EJ-T1_GE3
PNEDA Part # SQA403EJ-T1_GE3
Description MOSFET P-CHAN 30V
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,074
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQA403EJ-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQA403EJ-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQA403EJ-T1_GE3, SQA403EJ-T1_GE3 Datasheet (Total Pages: 8, Size: 268.6 KB)
PDFSQA403EJ-T1_GE3 Datasheet Cover
SQA403EJ-T1_GE3 Datasheet Page 2 SQA403EJ-T1_GE3 Datasheet Page 3 SQA403EJ-T1_GE3 Datasheet Page 4 SQA403EJ-T1_GE3 Datasheet Page 5 SQA403EJ-T1_GE3 Datasheet Page 6 SQA403EJ-T1_GE3 Datasheet Page 7 SQA403EJ-T1_GE3 Datasheet Page 8

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SQA403EJ-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs20mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1880pF @ 10V
FET Feature-
Power Dissipation (Max)13.6W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

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