SQA401EJ-T1_GE3
For Reference Only
| Part Number | SQA401EJ-T1_GE3 |
| PNEDA Part # | SQA401EJ-T1_GE3 |
| Description | MOSFET P-CH 20V 3.75A SC70-6 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 6,048 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SQA401EJ-T1_GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SQA401EJ-T1_GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SQA401EJ-T1_GE3 Datasheet
- where to find SQA401EJ-T1_GE3
- Vishay Siliconix
- Vishay Siliconix SQA401EJ-T1_GE3
- SQA401EJ-T1_GE3 PDF Datasheet
- SQA401EJ-T1_GE3 Stock
- SQA401EJ-T1_GE3 Pinout
- Datasheet SQA401EJ-T1_GE3
- SQA401EJ-T1_GE3 Supplier
- Vishay Siliconix Distributor
- SQA401EJ-T1_GE3 Price
- SQA401EJ-T1_GE3 Distributor
SQA401EJ-T1_GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 13.6W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-70-6 Single |
| Package / Case | PowerPAK® SC-70-6 |
The Products You May Be Interested In
|
Manufacturer Toshiba Semiconductor and Storage Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 450V Current - Continuous Drain (Id) @ 25°C 13A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 6A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FL Package / Case TO-220-3, Short Tab |
Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 1Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 800nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 46.1pF @ 10V FET Feature - Power Dissipation (Max) 400mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package X1-DFN1212-3 Package / Case 3-UDFN |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 59A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.5mOhm @ 21A, 10V Vgs(th) (Max) @ Id 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1210pF @ 15V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 21A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 3.5mOhm @ 20A, 4.5V Vgs(th) (Max) @ Id 1.1V @ 50µA Gate Charge (Qg) (Max) @ Vgs 62nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 3170pF @ 25V FET Feature - Power Dissipation (Max) 2.7W (Ta), 37W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PQFN (3x3) Package / Case 8-VQFN Exposed Pad |
Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 26mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 34nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 6V FET Feature - Power Dissipation (Max) 600mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSST Package / Case 8-SMD, Flat Lead |
