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SQ4949EY-T1_GE3

SQ4949EY-T1_GE3

For Reference Only

Part Number SQ4949EY-T1_GE3
PNEDA Part # SQ4949EY-T1_GE3
Description MOSFET 2 P-CH 30V 7.5A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,844
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ4949EY-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ4949EY-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQ4949EY-T1_GE3, SQ4949EY-T1_GE3 Datasheet (Total Pages: 9, Size: 182.46 KB)
PDFSQ4949EY-T1_GE3 Datasheet Cover
SQ4949EY-T1_GE3 Datasheet Page 2 SQ4949EY-T1_GE3 Datasheet Page 3 SQ4949EY-T1_GE3 Datasheet Page 4 SQ4949EY-T1_GE3 Datasheet Page 5 SQ4949EY-T1_GE3 Datasheet Page 6 SQ4949EY-T1_GE3 Datasheet Page 7 SQ4949EY-T1_GE3 Datasheet Page 8 SQ4949EY-T1_GE3 Datasheet Page 9

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SQ4949EY-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7.5A (Tc)
Rds On (Max) @ Id, Vgs35mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1020pF @ 25V
Power - Max3.3W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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