SQ4483BEEY-T1_GE3
For Reference Only
| Part Number | SQ4483BEEY-T1_GE3 |
| PNEDA Part # | SQ4483BEEY-T1_GE3 |
| Description | MOSFET P-CHANNEL 30V 22A 8SOIC |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 3,562 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 28 - Dec 3 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SQ4483BEEY-T1_GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SQ4483BEEY-T1_GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SQ4483BEEY-T1_GE3 Datasheet
- where to find SQ4483BEEY-T1_GE3
- Vishay Siliconix
- Vishay Siliconix SQ4483BEEY-T1_GE3
- SQ4483BEEY-T1_GE3 PDF Datasheet
- SQ4483BEEY-T1_GE3 Stock
- SQ4483BEEY-T1_GE3 Pinout
- Datasheet SQ4483BEEY-T1_GE3
- SQ4483BEEY-T1_GE3 Supplier
- Vishay Siliconix Distributor
- SQ4483BEEY-T1_GE3 Price
- SQ4483BEEY-T1_GE3 Distributor
SQ4483BEEY-T1_GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 113nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | 7W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 820pF @ 100V FET Feature - Power Dissipation (Max) 78W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-PAK (TO-252AA) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 14.6A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.9mOhm @ 40A, 10V Vgs(th) (Max) @ Id 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2230pF @ 15V FET Feature - Power Dissipation (Max) 2.8W (Ta), 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-1 Package / Case 8-PowerTDFN |
Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 200mOhm @ 15A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4150pF @ 25V FET Feature - Power Dissipation (Max) 460W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3 |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 170mOhm @ 13A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1707pF @ 100V FET Feature - Power Dissipation (Max) 278W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 23A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 350mOhm @ 16A, 10V Vgs(th) (Max) @ Id 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 9940pF @ 25V FET Feature - Power Dissipation (Max) 570W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case TO-247-3 |
