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SQ4470EY-T1_GE3

SQ4470EY-T1_GE3

For Reference Only

Part Number SQ4470EY-T1_GE3
PNEDA Part # SQ4470EY-T1_GE3
Description MOSFET N-CH 60V 16A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 23,700
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ4470EY-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ4470EY-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQ4470EY-T1_GE3, SQ4470EY-T1_GE3 Datasheet (Total Pages: 10, Size: 208.17 KB)
PDFSQ4470EY-T1_GE3 Datasheet Cover
SQ4470EY-T1_GE3 Datasheet Page 2 SQ4470EY-T1_GE3 Datasheet Page 3 SQ4470EY-T1_GE3 Datasheet Page 4 SQ4470EY-T1_GE3 Datasheet Page 5 SQ4470EY-T1_GE3 Datasheet Page 6 SQ4470EY-T1_GE3 Datasheet Page 7 SQ4470EY-T1_GE3 Datasheet Page 8 SQ4470EY-T1_GE3 Datasheet Page 9 SQ4470EY-T1_GE3 Datasheet Page 10

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SQ4470EY-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 6A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3165pF @ 25V
FET Feature-
Power Dissipation (Max)7.1W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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