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SQ4425EY-T1_GE3

SQ4425EY-T1_GE3

For Reference Only

Part Number SQ4425EY-T1_GE3
PNEDA Part # SQ4425EY-T1_GE3
Description MOSFET P-CHANNEL 30V 18A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 19,806
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ4425EY-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ4425EY-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQ4425EY-T1_GE3, SQ4425EY-T1_GE3 Datasheet (Total Pages: 9, Size: 183.81 KB)
PDFSQ4425EY-T1_GE3 Datasheet Cover
SQ4425EY-T1_GE3 Datasheet Page 2 SQ4425EY-T1_GE3 Datasheet Page 3 SQ4425EY-T1_GE3 Datasheet Page 4 SQ4425EY-T1_GE3 Datasheet Page 5 SQ4425EY-T1_GE3 Datasheet Page 6 SQ4425EY-T1_GE3 Datasheet Page 7 SQ4425EY-T1_GE3 Datasheet Page 8 SQ4425EY-T1_GE3 Datasheet Page 9

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SQ4425EY-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3630pF @ 25V
FET Feature-
Power Dissipation (Max)6.8W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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