SQ4184EY-T1_GE3
For Reference Only
| Part Number | SQ4184EY-T1_GE3 |
| PNEDA Part # | SQ4184EY-T1_GE3 |
| Description | MOSFET N-CH 40V 29A SO8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 7,182 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 26 - May 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SQ4184EY-T1_GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SQ4184EY-T1_GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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SQ4184EY-T1_GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 14A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400pF @ 20V |
| FET Feature | - |
| Power Dissipation (Max) | 7.1W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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Manufacturer Central Semiconductor Corp Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 65mOhm @ 6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V Vgs (Max) 25V Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V FET Feature - Power Dissipation (Max) 1.2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-89 Package / Case TO-243AA |
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 73mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 475pF @ 10V FET Feature - Power Dissipation (Max) 780mW (Ta), 1.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-Microfoot Package / Case 4-XFBGA, CSPBGA |
