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SQ4080EY-T1_GE3

SQ4080EY-T1_GE3

For Reference Only

Part Number SQ4080EY-T1_GE3
PNEDA Part # SQ4080EY-T1_GE3
Description MOSFET N-CHANNEL 150V 18A 8SO
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,912
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ4080EY-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ4080EY-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQ4080EY-T1_GE3, SQ4080EY-T1_GE3 Datasheet (Total Pages: 6, Size: 186.5 KB)
PDFSQ4080EY-T1_GE3 Datasheet Cover
SQ4080EY-T1_GE3 Datasheet Page 2 SQ4080EY-T1_GE3 Datasheet Page 3 SQ4080EY-T1_GE3 Datasheet Page 4 SQ4080EY-T1_GE3 Datasheet Page 5 SQ4080EY-T1_GE3 Datasheet Page 6

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SQ4080EY-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs85mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1590pF @ 75V
FET Feature-
Power Dissipation (Max)7.1W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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