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SQ3585EV-T1_GE3

SQ3585EV-T1_GE3

For Reference Only

Part Number SQ3585EV-T1_GE3
PNEDA Part # SQ3585EV-T1_GE3
Description MOSFET N/P-CH 20V 6TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,562
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ3585EV-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ3585EV-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQ3585EV-T1_GE3, SQ3585EV-T1_GE3 Datasheet (Total Pages: 11, Size: 263.16 KB)
PDFSQ3585EV-T1_GE3 Datasheet Cover
SQ3585EV-T1_GE3 Datasheet Page 2 SQ3585EV-T1_GE3 Datasheet Page 3 SQ3585EV-T1_GE3 Datasheet Page 4 SQ3585EV-T1_GE3 Datasheet Page 5 SQ3585EV-T1_GE3 Datasheet Page 6 SQ3585EV-T1_GE3 Datasheet Page 7 SQ3585EV-T1_GE3 Datasheet Page 8 SQ3585EV-T1_GE3 Datasheet Page 9 SQ3585EV-T1_GE3 Datasheet Page 10 SQ3585EV-T1_GE3 Datasheet Page 11

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SQ3585EV-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN and P-Channel
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.57A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 4.5V, 3.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.67W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

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